NXP Semiconductors BUK9608-55,118 Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 6900pF @ 25V Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 187W Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 5V Series: TrenchMOS?„? Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934045270118, BUK9608-55 /T3